1994. 5. 11 1/1 semiconductor technical data KTC9012 epitaxial planar pnp transistor revision no : 0 general purpose application. switching application. features excellent h fe linearity. complementary to ktc9013. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-1v, i c =-50ma 64 - 246 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.25 v base-emitter voltage v be i c =-100ma, v ce =-1v -0.8 -1.0 v transition frequency f t v cb =-6v, i c =-20ma, f=100mhz 150 - - mhz collector output capacitance c ob v cb =-6v, i e =0, f=1mhz - 7.0 - pf note : h fe classification d:64 91, e:78 112, f:96 135, g:118 166, h:144 202, i:176 246
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